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| BUL310 BUL310PI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s s s s s s s SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC LARGE RBSOA U.L. RECOGNISED ISOWATT220 PACKAGE (U.L. FILE # E81734 (N)): ISOLATION VOLTAGE 1500VRMS 1 2 3 1 2 3 TO-220 ISOWATT220 APPLICATIONS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The BUL310 and BUL310PI are manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter BUL 310 Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp <5 ms) Base Current Base Peak Current (tp <5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. O perating Junction Temperature 75 -65 to 150 150 1000 500 9 5 10 3 4 35 Value BUL310PI V V V V A A A W o o INTERNAL SCHEMATIC DIAGRAM Uni t C C 1/7 September 1997 BUL310/PI THERMAL DATA T O-220 R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.65 62.5 ISOW ATT 220 3.58 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO V CEO(sus) V EBO V CE(sat ) Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (IB = 0) Collector-Emitter Sustaining Voltage Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain INDUCTIVE LOAD Storage Time Fall T ime INDUCTIVE LOAD Storage Time Fall T ime Test Cond ition s V CE = 1000 V V CE = 1000 V V EC = 400 V I C = 100 mA I E = 10 mA IC = 1 A IC = 2 A IC = 3 A IC = 1 A IC = 2 A IC = 3 A I C = 10 mA IC = 3 A IC = 2 A V BE(of f) = -5 V V CL = 250 V IC = 2 A V BE(of f) = -5V V CL = 250 V o T j = 125 C I B = 0.2 A I B = 0.4 A I B = 0.6 A I B = 0.2 A I B = 0.4 A I B = 0.6 A V CE = 5 V V CE = 2.5 V IB1 = 0.4 A R BB = 0 L = 200 H IB1 = 0.4 A R BB = 0 L = 200 H 10 10 1.2 80 1.8 150 1.9 160 s ns s ns L= 25 mH 500 9 0.5 0.7 1.1 1 1.1 1.2 Tj = 125 C o Min. Typ . Max. 100 500 250 Un it A A A V V V V V V V V V BE(s at) hFE ts tf ts tf Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Safe Operating Areas Derating Curve 2/7 BUL310/PI DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Inductive Fall Time Inductive Storage Time 3/7 BUL310/PI Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuit (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier 4/7 BUL310/PI TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 5/7 BUL310/PI ISOWATT220 MECHANICAL DATA DIM. MIN. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 O 28.6 9.8 15.9 9 3 4.4 2.5 2.5 0.4 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 16.4 9.3 3.2 1.126 0.385 0.626 0.354 0.118 mm TYP. MAX. 4.6 2.7 2.75 0.7 1 1.7 1.7 5.2 2.7 10.4 MIN. 0.173 0.098 0.098 0.015 0.030 0.045 0.045 0.195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 A B L3 L6 L7 F1 F D G1 E H F2 123 L2 L4 P011G 6/7 G BUL310/PI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada- China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . .. 7/7 |
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